1 UM3801 n-ch and p-ch fast switching mosfets rating symbol parameter n-ch p-ch units v ds drain-source voltage 30 -30 v v gs gate-sou r ce voltage 20 20 v i d @t a =25 continuous drain current, v gs @ 10v 1 6 -5.7 a i d @t a =70 continuous drain current, v gs @ 10v 1 4.8 -4.5 a i dm pulsed drain current 2 24 -24 a eas single pulse avalanche energy 3 26.6 110 mj i as avalanche current 12.7 -30 a p d @t a =25 total power dissipation 4 1.5 1.5 w t stg storage temperature range -55 to 150 -55 to 150 t j operating junction temperature range -55 to 150 -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w r jc thermal resistance junction-case 1 --- 60 /w id 30v 27m ? 6a -30v 32m ? -5.7a the UM3801 is the highest performance trench n-ch and p-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UM3801 meet the rohs and green product requirement 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z ccfl back-light inverter absolute maximum ratings thermal data sop8 pin configuration product summery bv rd dss s(on)
2 n-ch and p-ch fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 30 --- --- v bv dss / t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.023 --- v/ v gs =10v , i d =6a --- 22 27 r ds(on) static drain-source on-resistance 2 v gs =4.5v , i d =4a --- 32 40 m v gs(th) gate threshold voltage 1.0 1.5 2.5 v v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =250ua --- -4.2 --- mv/ v ds =24v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =24v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =6a --- 12.8 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 2.3 4.6 q g total gate charge (4.5v) --- 5 --- q gs gate-source charge --- 1.11 --- q gd gate-drain charge v ds =20v , v gs =4.5v , i d =6a --- 2.61 --- nc t d(on) turn-on delay time --- 7.7 --- t r rise time --- 46 --- t d(off) turn-off delay time --- 11 --- t f fall time v dd =12v , v gs =10v , r g =3.3 i d =6a --- 3.6 --- ns c iss input capacitance --- 416 --- c oss output capacitance --- 62 --- c rss reverse transfer capacitance v ds =15v , v gs =0v , f=1mhz --- 51 --- pf symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =6a 6 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 --- --- 6 a i sm pulsed source current 2,6 v g =v d =0v , force current --- --- 24 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1.2 v n-channel electrical characteristics (t j =25 , unless otherwise noted) diode characteristics guaranteed avalanche characteristics note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =12.7a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. UM3801
3 n-ch and p-ch fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =-250ua -30 --- --- v bv dss / t j bv dss temperature coefficient reference to 25 , i d =-1ma --- -0.021 --- v/ v gs =-10v , i d =-6a --- 26 32 r ds(on) static drain-source on-resistance 2 v gs =-4.5v , i d =-4a --- 45 56 m v gs(th) gate threshold voltage -1.0 -1.5 -2.5 v v gs(th) v gs(th) temperature coefficient v gs =v ds , i d =-250ua --- -4.2 --- mv/ v ds =-24v , v gs =0v , t j =25 --- --- 1 i dss drain-source leakage current v ds =-24v , v gs =0v , t j =55 --- --- 5 ua i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =-5v , i d =-6a --- 12.6 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz 15 30 q g total gate charge (-4.5v) --- 9.8 --- q gs gate-source charge --- 2.2 --- q gd gate-drain charge v ds =-20v , v gs =-4.5v , i d =-6a --- 3.4 --- nc t d(on) turn-on delay time --- 16.4 --- t r rise time --- 20.2 --- t d(off) turn-off delay time --- 55 --- t f fall time v dd =-24v , v gs =-10v , r g =3.3 , i d =-1a --- 10 --- ns c iss input capacitance --- 930 --- c oss output capacitance --- 148 --- c rss reverse transfer capacitance v ds =-15v , v gs =0v , f=1mhz --- 115 --- pf symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =-25v , l=0.1mh , i as =-15a 28 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 --- --- -5.7 a i sm pulsed source current 2,6 v g =v d =0v , force current --- --- -24 a v sd diode forward voltage 2 v gs =0v , i s =-1a , t j =25 --- --- -1.2 v note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =-25v,v gs =-10v,l=0.1mh,i as =-30a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. p-channel electrical characteristics (t j =25 , unless otherwise noted) diode characteristics guaranteed avalanche characteristics UM3801
4 n-ch and p-ch fast switching mosfets 0 4 8 12 16 20 24 28 00.511.52 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 20 35 50 65 246810 v gs (v) r dson (m ? ) i d =6a 0 2 4 6 0.00 0.25 0.50 0.75 1.00 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0 2.5 5 7.5 10 02.557.510 q g , total gate charge (nc) v gs gate to source voltage (v) v ds =20v i d =6a 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance n-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UM3801
5 n-ch and p-ch fast switching mosfets 10 100 1000 1 5 9 13172125 v ds drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 v ds (v) i d (a) t a =25 o c single pulse 100ms 100us 1ms 10ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t a +p dm xr ja t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UM3801
6 n-ch and p-ch fast switching mosfets 0 4 8 12 16 20 24 0 0.5 1 1.5 2 -v ds , drain-to-source voltage (v) -i d drain current (a) v gs =-10v v gs =-7v v gs =-5v v gs =-4.5v v gs =-3v 20 30 40 50 246810 -v gs (v) r dson (m ? ) i d =-6a 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1 -v sd , source-to-drain voltage (v) -i s source current(a) t j =150 t j =25 0 2 4 6 8 10 0 5 10 15 20 q g , total gate charge (nc) -v gs gate to source voltage (v) v ds =-20v i d =-6a 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( ) normalized -v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) v.s t j fig.6 normalized r dson v.s t j p-channel typical characteristics fig.1 typical output characteristics fig.2 on-resistance v.s gate-source UM3801
7 n-ch and p-ch fast switching mosfets 10 100 1000 10000 1 5 9 13172125 -v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 -v ds (v) -i d (a) t a =25 o c single pulse 100ms 100us 1ms 10ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t a +p dm xr ja t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UM3801
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